Full-field EUV and immersion lithography integration in 0.186&#x03BC;m<sup>2</sup> FinFET 6T-SRAM cell
A. Veloso(IMEC), Thomas Hoffmann(IMEC), Michał Rakowski(IMEC), H. Meiling(ASML (Netherlands)), Jean‐François de Marneffe(IMEC), Bart Baudemprez(IMEC), Andre van Dijk(ASM International (Belgium)), Vincent Truffert(IMEC), M. Jurczak(IMEC), Danny Goossens(IMEC), A. Lauwers(IMEC), R. Schreutelkamp(Applied Materials (United States)), Johan De Backer(IMEC), C. Huffman(IMEC), Frieda Van Roey(IMEC), S. Brus(University of Liège), Andriy Hikavyy(IMEC), L. Romijn(ASM International (Belgium)), Sjoerd Lok(ASML (Netherlands)), Nadine Collaert(IMEC), M. Demand(IMEC), C. Vrancken(IMEC), Bas Hultermans(ASML (Netherlands)), Christie Delvaux(IMEC), A. De Keersgieter(IMEC), Reza Arghavani(Applied Materials (United States)), Liesbeth Witters(IMEC), Janko Versluijs(IMEC), Gian F. Lorusso(IMEC), N. Heylen(IMEC), C. Pigneret(ASM International (Belgium)), H. Bender(IMEC), Jan Hermans(IMEC), Pieter Boelen(Material (Belgium)), Patrick Ong(IMEC), Kris Baert(Ghent University), S. Mertens(IMEC), P. Absil(IMEC), Bertrand Parvais(IMEC), S. Demuynck(IMEC), J. Gelatos(Applied Materials (United States)), Monique Ercken(IMEC), E. Altamirano(IMEC), R. Rooyackers(IMEC), A. M. Goethals(IMEC), Staf Verhaegen(IMEC), A. Noori(Applied Materials (United States)), Olivier Richard(IMEC), K. Shah(Applied Materials (United States)), David Laidler(IMEC)
Cited by 9
Related Papers
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
|Nano Letters|2014|338
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
|IEEE Transactions on Electron Devices|2013|259
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy
|Applied Physics Letters|1996|242