Demonstration of scaled 0.099&#x00B5;m<sup>2</sup> FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
A. Veloso(IMEC), S. Biesemans(IMEC), Olivier Richard(IMEC), Andrew Cockburn(Material (Belgium)), Michał Rakowski(IMEC), H. Meiling(ASML (Netherlands)), H.F.W. Dekkers(IMEC), V. Gravey(Material (Belgium)), Bart Baudemprez(IMEC), Andre van Dijk(ASM International (Belgium)), Geert Vandenberghe(IMEC), S. Locorotondo(IMEC), Danny Goossens(IMEC), R. Schreutelkamp(Applied Materials (United States)), Johan De Backer(IMEC), C. Huffman(IMEC), Frieda Van Roey(IMEC), S. Brus(University of Liège), Andriy Hikavyy(IMEC), L. Romijn(ASM International (Belgium)), Herbert Struyf(IMEC), Sjoerd Lok(ASML (Netherlands)), M. Demand(IMEC), Thomas Hoffmann(IMEC), C. Vrancken(IMEC), Bas Hultermans(ASML (Netherlands)), Christie Delvaux(IMEC), A. De Keersgieter(IMEC), Ramakrishnan Rajagopalan(Applied Materials (United States)), Mircea Dusa(Texas Instruments (United States)), Kristof Kellens(IMEC), Frédéric Lazzarino(IMEC), N. Heylen(IMEC), C. Pigneret(ASM International (Belgium)), H. Bender(IMEC), Jan Hermans(IMEC), Patrick Ong(IMEC), Kris Baert(Ghent University), P. Absil(IMEC), T. Vandeweyer(IMEC), S. Demuynck(IMEC), J. Gelatos(Applied Materials (United States)), Monique Ercken(IMEC), E. Altamirano(IMEC), A. M. Goethals(IMEC), Staf Verhaegen(IMEC), Gerald Beyer(IMEC), Henny Volders(IMEC), K. Shah(Applied Materials (United States)), Kurt Ronse(IMEC)
Cited by 14
Related Papers
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
|Nano Letters|2014|338
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy
|Applied Physics Letters|1996|242
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189