Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Benjamin Vincent(IMEC), Matty Caymax(IMEC), Clément Merckling(IMEC), Johan Meersschaut(IMEC), Federica Gencarelli(IMEC), Wilfried Vandervorst(Imec the Netherlands), Bastien Douhard(IMEC), Dirch Hjorth Petersen(Technical University of Denmark), Marc Heyns(IMEC), Henrik H. Henrichsen, H. Bender(IMEC), Ole Hansen(Thomas Jefferson National Accelerator Facility), Roger Loo(IMEC)
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