10&#x00D7;10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operationB. Govoreanu, M. Jurczak, Dirk J. Wouters et al.|Unknown|2011Cited by 611
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithographyM.J.H. van Dal, R.J.P. Lander, Nadine Collaert et al.|Unknown|2007Cited by 79
Gatestacks for scalable high-performance FinFETsG. Vellianitis, Liangzhen Lai, J. Pétry et al.|Unknown|2007Cited by 32
Demonstration of scaled 0.099&#x00B5;m<sup>2</sup> FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technologyA. Veloso, S. Biesemans, S. Demuynck et al.|Unknown|2009Cited by 14
Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory applicationGouri Sankar Kar, M. Jurczak, A. Fantini et al.|Unknown|2012Cited by 13