Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274µm2 6T-SRAM cell and advanced CMOS logic circuits
Liesbeth Witters(IMEC), S. Biesemans(IMEC), J. Van Aelst(IMEC), David Laidler(IMEC), Patrick Willems(IMEC), Jean‐François de Marneffe(IMEC), Abhisek Dixit(IMEC), Werner Boullart(IMEC), Geert Vandenberghe(IMEC), S. Locorotondo(IMEC), M. Jurczak(IMEC), A. Lauwers(IMEC), S. Brus(University of Liège), Ivan Pollentier(IMEC), Vincent Wiaux(Imec the Netherlands), Myriam Moelants, Mireille Maenhoudt(IMEC), Nadine Collaert(IMEC), M. Demand(IMEC), C. Vrancken(IMEC), S. Vanhaelemeersch(Imec the Netherlands), Christie Delvaux(IMEC), Patrick Jaenen(IMEC), Eric Hendrickx(University of Arizona), Janko Versluijs(IMEC), N. Heylen(IMEC), Christina De Meyer, Kris Baert(Ghent University), A. Nackaerts(IMEC), S. Beckx(Imec the Netherlands), T. Vandeweyer(IMEC), S. Demuynck(IMEC), Philippe Leray(IMEC), Monique Ercken(IMEC), Johan M. Wouters(IMEC), B. Degroote(IMEC), M. W. Goodwin(Texas Instruments (United States)), R. Rooyackers(IMEC), Staf Verhaegen(IMEC), M. Van Hove(IMEC), J. Van Olmen(IMEC), Kurt Ronse(IMEC)
Unknown
January 1, 2005
Cited by 4
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