NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectricsK. Henson, S. Biesemans, S. Brus et al.|Unknown|2005Cited by 8
Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274µm2 6T-SRAM cell and advanced CMOS logic circuitsLiesbeth Witters, S. Biesemans, Nadine Collaert et al.|Unknown|2005Cited by 4