Strain enhanced low-V<inf>T</inf> CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
Stefan Kubicek(Austrian Academy of Sciences), Thomas Hoffmann(IMEC), Laura Nyns(IMEC), S. Biesemans(IMEC), M. Jurczak(IMEC), M. Aoulaiche(IMEC), Rita Vos(IMEC), T. Witters(IMEC), A. Mercha(IMEC), S. Brus(University of Liège), Vincent S. Chang(IMEC), T. Kauerauf(IMEC), Vasile Paraschiv(IMEC), A. Delabie(IMEC), M. Demand(IMEC), C. Vrancken(IMEC), E. Röhr(IMEC), L.-Å. Ragnarsson(IMEC), Liesbeth Witters(IMEC), J.C. Hooker(NXP (Belgium)), Christoph Adelmann(Imec the Netherlands), H.-J. Cho(IMEC), Hao Yu(Shandong University), T. Chiarella(IMEC), Riichiro Mitsuhashi(IMEC), A. Veloso(IMEC), C. Ortolland(IMEC), Barry O’Sullivan(Toshiba (Japan)), P. Absil(IMEC), Bertrand Parvais(IMEC), Sven Van Elshocht(Columbia University), A. Akheyar(IMEC), R. Singanamalla(IMEC), S-Z. Chang(IMEC), Y. Okuno, T. Schram(IMEC), K. De Meyer(IMEC), C. Kerner(IMEC)
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