Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT DevicesMoonju Cho, G. Groeseneken, Jae-Duk Lee et al.|IEEE Transactions on Electron Devices|2012Cited by 90
Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETsMoonju Cho, G. Groeseneken, Philippe Roussel et al.|IEEE Transactions on Electron Devices|2013Cited by 90
Review of reliability issues in high-k/metal gate stacksR. Degraeve, G. Groeseneken, B. Kaczer et al.|Unknown|2008Cited by 65
Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctionsLars‐Åke Ragnarsson, Marc Heyns, S. Severi et al.|IEEE Transactions on Electron Devices|2006Cited by 32
Positive and negative bias temperature instability on sub-nanometer eot high-K MOSFETsMoonju Cho, G. Groeseneken, M. Aoulaiche et al.|Unknown|2010Cited by 32