Low V<inf>T</inf> CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only AnnealS. Kubicek, S. Biesemans, T. Schram et al.|Unknown|2007Cited by 18
Strain enhanced low-V<inf>T</inf> CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delayStefan Kubicek, Thomas Hoffmann, T. Schram et al.|Unknown|2008Cited by 9
Novel process to pattern selectively dual dielectric capping layers using soft-mask onlyT. Schram, S. Biesemans, Stefan Kubicek et al.|Unknown|2008Cited by 9
Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layerJ. Pétry, J.C. Hooker, R. Singanamalla et al.|Unknown|2007Cited by 2
Low VT Mo(O,N) metal gate electrodes on HfSiON for sub-45nm pMOSFET DevicesR. Singanamalla, S. Biesemans, C. Ravit et al.|Unknown|2006Cited by 1