Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
A. Kerber(Infineon Technologies (Germany)), Udo Schwalke(Technische Universität Darmstadt), T. Kauerauf(IMEC), L. Pantisano(IMEC), Y. Kim, R. Degraeve(IMEC), E. Cartier(IBM (United States)), G. Groeseneken(KU Leuven), H.E. Maes(IMEC), Tuo‐Hung Hou(National Yang Ming Chiao Tung University)
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