Ni-based FUSI gates: CMOS Integration for 45nm node and beyond

Thomas Hoffmann(IMEC), J. A. Kittl(IMEC), M. Jurczak(IMEC), B. Froment(STMicroelectronics (Switzerland)), M. Rosmeulen(IMEC), A. Lauwers(IMEC), I. Satoru(Imec the Netherlands), S. Brus(University of Liège), J. Ramos(IMEC), H. L. Tigelaar(IMEC), T. Kauerauf(IMEC), C. Vrancken(IMEC), M. Niwa, H.Y. Yu(IMEC), Mark van Dal(Philips (United States)), T. Chiarella(IMEC), A. Nackaerts(IMEC), A. Shickova(IMEC), A. Rothschild(IMEC), A. Veloso(IMEC), P. Absil(IMEC), C. Kerner(IMEC), R. Mitsuhashi(Panasonic (China)), S. Biesemans(IMEC)
Unknown
December 1, 2006
10.1109/iedm.2006.346759
Cited by 16

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