Ni-based FUSI gates: CMOS Integration for 45nm node and beyondThomas Hoffmann, J. A. Kittl, T. Kauerauf et al.|Unknown|2006Cited by 16
Demonstration of a New Approach Towards 0.25V Low-Vt CMOS Using Ni-Based FUSIS. Biesemans, H.Y. Yu, Philip Absil et al.|Unknown|2006Cited by 6
Low Power CMOS Featuring Dual Work Function FUSI on HfSiON and 17ps Inverter DelayThomas Hoffmann, S. Biesemans, A. Veloso et al.|Unknown|2006Cited by 4
Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETsGrégory Lousberg, S. Biesemans, H.Y. Yu et al.|Unknown|2006Cited by 1