Highly scalable effective work function engineering approach for multi-V T modulation of planar and FinFET-based RMG high-k last devices for (Sub-)22nm nodes
A. Veloso(IMEC), Naoto Horiguchi(IMEC), T. Schram(IMEC), Hiroaki Arimura(IMEC), E. Vecchio(IMEC), Xiaodong Shi(Beijing Anding Hospital), Farid Sebaai(IMEC), J. W. Lee(IMEC), Eddy Simoen(IMEC), T. Witters(IMEC), S. Brus(University of Liège), Vasile Paraschiv(IMEC), M. J. Cho(IMEC), K. Devriendt(IMEC), Aaron Thean(National University of Singapore), Ph. Roussel(IMEC), A. Van Ammel, Yuki Higuchi(Toyota Central Research and Development Laboratories (Japan)), Kristof Kellens(IMEC), N. Heylen(IMEC), H. Bender(IMEC), Harold Dekkers(IMEC), T. Chiarella(IMEC), G. Boccardi(IMEC), Lars‐Åke Ragnarsson(IMEC), Olivier Richard(IMEC), Soon Aik Chew(IMEC), Aayushi Dangol(IMEC)
Unknown
June 11, 2013
Cited by 9
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