Gate-last vs. gate-first technology for aggressively scaled EOT logic/RF CMOSA. Veloso, Thomas Hoffmann, L.-Å. Ragnarsson et al.|Symposium on VLSI Technology|2011Cited by 31
Process control & integration options of RMG technology for aggressively scaled devicesA. Veloso, Naoto Horiguchi, Yuichi Higuchi et al.|Unknown|2012Cited by 21
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate TechnologyA. Veloso, Naoto Horiguchi, Soon Aik Chew et al.|Japanese Journal of Applied Physics|2013Cited by 16
Highly scalable effective work function engineering approach for multi-V T modulation of planar and FinFET-based RMG high-k last devices for (Sub-)22nm nodesA. Veloso, Naoto Horiguchi, G. Boccardi et al.|Unknown|2013Cited by 9
NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectricsK. Henson, S. Biesemans, Nadine Collaert et al.|Unknown|2005Cited by 8