An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substratesNiamh Waldron, A. V-Y. Thean, Clément Merckling et al.|Unknown|2014Cited by 90
Plasma doping and reduced crystalline damage for conformally doped fin field effect transistorsJae Wook Lee, Aaron Thean, Y. Sasaki et al.|Applied Physics Letters|2013Cited by 30
Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETsM. Togo, Aaron Thean, Jan Willem Maes et al.|Unknown|2012Cited by 13
A record Gm<sub>SAT</sub>/SS<sub>SAT</sub> and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparationHiroaki Arimura, Naoto Horiguchi, Daire Cott et al.|Unknown|2019Cited by 12
Highly scalable effective work function engineering approach for multi-V T modulation of planar and FinFET-based RMG high-k last devices for (Sub-)22nm nodesA. Veloso, Naoto Horiguchi, G. Boccardi et al.|Unknown|2013Cited by 9