Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOSA. Veloso, Aaron Thean, Geert Hellings et al.|Unknown|2015Cited by 53
Process control & integration options of RMG technology for aggressively scaled devicesA. Veloso, Naoto Horiguchi, T. Schram et al.|Unknown|2012Cited by 21
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate TechnologyA. Veloso, Naoto Horiguchi, Soon Aik Chew et al.|Japanese Journal of Applied Physics|2013Cited by 16
Highly scalable effective work function engineering approach for multi-V T modulation of planar and FinFET-based RMG high-k last devices for (Sub-)22nm nodesA. Veloso, Naoto Horiguchi, G. Boccardi et al.|Unknown|2013Cited by 9
High yield sub-0.1&#x00B5;m<sup>2</sup> 6T-SRAM cells, featuring high-k/metal-gate finfet devices, double gate patterning, a novel fin etch strategy, full-field EUV lithography and optimized junction design &amp; layoutNaoto Horiguchi, S. Biesemans, S. Demuynck et al.|Unknown|2010Cited by 8