Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOSA. Veloso, Aaron Thean, Geert Hellings et al.|Unknown|2015Cited by 53
(Invited) Vertical Nanowire FET Integration and Device AspectsA. Veloso, Aaron Thean, Philippe Matagne et al.|ECS Transactions|2016Cited by 50
Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient CircuitsA. Veloso, Philippe Matagne, Geert Eneman et al.|Unknown|2019Cited by 41
Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cellsA. Veloso, Aaron Thean, Bertrand Parvais et al.|Unknown|2016Cited by 37
Process control & integration options of RMG technology for aggressively scaled devicesA. Veloso, Naoto Horiguchi, Yuichi Higuchi et al.|Unknown|2012Cited by 21