Low V<inf>t</inf> Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases
H.Y. Yu(IMEC), S. Biesemans(IMEC), M. Jurczak(IMEC), A. Lauwers(IMEC), Rita Vos(IMEC), Bart Onsia, S. Brus(University of Liège), T. Kauerauf(IMEC), M. Demand(IMEC), Thomas Hoffmann(IMEC), C. Vrancken(IMEC), M. Niwa, Christoph Adelmann(Imec the Netherlands), P. Lehnen(IMEC), A. Veloso(IMEC), J. A. Kittl(IMEC), P. Absil(IMEC), Sven Van Elshocht(Columbia University), R. Mitsuhashi(Panasonic (China)), R. Singanamalla(IMEC), S.Z. Chang(KU Leuven), K. M. Yin(Taiwan Semiconductor Manufacturing Company (United States)), Xiaodong Shi(Beijing Anding Hospital), S. DeGendt(IMEC), S. Kubicek(IMEC)
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