Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type PrecursorsSven Van Elshocht, Marc Heyns, P. Lehnen et al.|Journal of The Electrochemical Society|2006Cited by 19
Low V<inf>t</inf> Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phasesH.Y. Yu, S. Biesemans, Xiaodong Shi et al.|Unknown|2007Cited by 11
Demonstration of Low $V_{t}$ Ni-FUSI N-MOSFETs With SiON Dielectrics by Using a $\hbox{Dy}_{2}\hbox{O}_{3}$ Cap LayerH.Y. Yu, S. Biesemans, S.Z. Chang et al.|IEEE Electron Device Letters|2007Cited by 5
Achieving Low-$V_{T}$ Ni-FUSI CMOS by Ultra-Thin $\hbox{Dy}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicate DielectricsA. Veloso, S. Biesemans, H.Y. Yu et al.|IEEE Electron Device Letters|2007Cited by 0
Achieving low V<inf>T</inf> Ni-FUSI CMOS via lanthanide incorporation in the gate stackA. Veloso, S. Biesemans, H.Y. Yu et al.|Unknown|2007Cited by 0