Low V<inf>t</inf> Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phasesH.Y. Yu, S. Biesemans, M. Demand et al.|Unknown|2007Cited by 11
Modulation of the effective work function of fully-silicided (FUSI) gate stacksJ. A. Kittl, S. Biesemans, A. Lauwers et al.|Microelectronic Engineering|2007Cited by 10
Demonstration of Low $V_{t}$ Ni-FUSI N-MOSFETs With SiON Dielectrics by Using a $\hbox{Dy}_{2}\hbox{O}_{3}$ Cap LayerH.Y. Yu, S. Biesemans, S.Z. Chang et al.|IEEE Electron Device Letters|2007Cited by 5
Achieving Low-$V_{T}$ Ni-FUSI CMOS by Ultra-Thin $\hbox{Dy}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicate DielectricsA. Veloso, S. Biesemans, H.Y. Yu et al.|IEEE Electron Device Letters|2007Cited by 0