Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
A. Veloso(IMEC), S. Biesemans(IMEC), A. Lauwers(IMEC), Rita Vos(IMEC), Bart Onsia, S. Brus(University of Liège), T. Kauerauf(IMEC), G. Whittemore(Axcelis Technologies (United States)), M. Demand(IMEC), Thomas Hoffmann(IMEC), C. Vrancken(IMEC), M. Niwa, Christoph Adelmann(Imec the Netherlands), H.Y. Yu(IMEC), Shu-Cheng Chang, P. Lehnen(IMEC), J. A. Kittl(IMEC), Barry O’Sullivan(Toshiba (Japan)), P. Absil(IMEC), Sven Van Elshocht(Columbia University), R. Mitsuhashi(Panasonic (China)), Kai Yin(IMEC), R. Singanamalla(IMEC), M. Jurczak(IMEC)
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