Achieving low V<inf>T</inf> Ni-FUSI CMOS via lanthanide incorporation in the gate stackA. Veloso, S. Biesemans, Christoph Adelmann et al.|Unknown|2007Cited by 0
Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stackA. Veloso, S. Biesemans, H.Y. Yu et al.|Solid-State Electronics|2008Cited by 0