Scaling of Hf-based high-k dielectrics
Marc Heyns(IMEC), Stefan Kubicek(Austrian Academy of Sciences), Johan Vertommen(Lam Research (Austria)), W. Deweerd(IMEC), G. Groeseneken(KU Leuven), Annelies Delabie(IMEC), Dong Hwa Kwak, Michel Houssa(IMEC), Wilman Tsai(Intel (United States)), T. Kauerauf(IMEC), L. Pantisano(IMEC), Jacob C. Hooker(Northwestern University), Wilfried Vandervorst(Imec the Netherlands), Matty Caymax(IMEC), M. Niwa, E. Röhr(IMEC), Shigenori Hayashi(Keio University), G.S. Lujan(IMEC), R. Degraeve(IMEC), Stefan De Gendt(Imec the Netherlands), B. Coenegrachts(Lam Research (Austria)), J Chen, K. Henson(Imec the Netherlands), Martine Claes(Imec the Netherlands), S. Beckx(Imec the Netherlands), Sven Van Elshocht(Columbia University), A. Kerber(Infineon Technologies (Germany)), Lars‐Åke Ragnarsson(IMEC), Y. Shimamoto(IMEC), Riikka L. Puurunen(Aalto University), R.J.P. Lander(NXP (Belgium)), T. Schram(IMEC)
Unknown
January 1, 2004
Cited by 0
Related Papers
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
Low-Loss SOI Photonic Wires and Ring Resonators Fabricated With Deep UV Lithography
|IEEE Photonics Technology Letters|2004|430