Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applicationsK.G. Anil, S. Biesemans, A. Veloso et al.|Unknown|2004Cited by 35
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μK. Henson, S. Biesemans, R.J.P. Lander et al.|Unknown|2005Cited by 12
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning developmentS. Beckx, B. Coenegrachts, Johan Vertommen et al.|Microelectronics Reliability|2005Cited by 12
NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectricsK. Henson, S. Biesemans, Nadine Collaert et al.|Unknown|2005Cited by 8
Scaling of high-k dielectrics towards sub-1nm EOTMarc Heyns, D. Pique, S. Beckx et al.|Unknown|2004Cited by 3