Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching MemoryUmberto Celano, Wilfried Vandervorst, Ludovic Goux et al.|Nano Letters|2015Cited by 181
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging DevicesUmberto Celano, Wilfried Vandervorst, Attilio Belmonte et al.|The Journal of Physical Chemistry Letters|2015Cited by 71
RRAMs based on anionic and cationic switching: a short overviewSergiu Clima, Geoffrey Pourtois, Kiroubanand Sankaran et al.|physica status solidi (RRL) - Rapid Research Letters|2014Cited by 43
Sub-10 nm low current resistive switching behavior in hafnium oxide stackYi Hou, W. Vandervorst, Umberto Celano et al.|Applied Physics Letters|2016Cited by 34