45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μK. Henson, S. Biesemans, R.J.P. Lander et al.|Unknown|2005Cited by 12
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning developmentS. Beckx, B. Coenegrachts, S. Biesemans et al.|Microelectronics Reliability|2005Cited by 12
Integrating high-k dielectrics: etched polysilicon or metal gates?T. Schram, S Lee, S. Beckx et al.|Solid State Technology|2003Cited by 7
Integration of high-k gate dielectrics - Wet etch, cleaning and surface conditioningStefan De Gendt, Marc Heyns, S. Beckx et al.|Unknown|2004Cited by 0
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