Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech.
A. Veloso(IMEC), Naoto Horiguchi(IMEC), T. Schram(IMEC), Anup Phatak(Applied Materials (United States)), X. Lu, Hilde Tielens(IMEC), Farid Sebaai(IMEC), Eddy Simoen(IMEC), L.-Å. Ragnarsson(IMEC), T. Witters(IMEC), S. Gandikota, S. Brus(University of Liège), Wei Tang(Applied Materials (United States)), K. Devriendt(IMEC), Aaron Thean(National University of Singapore), Yu Lei(Applied Materials (United States)), A. Van Ammel, Paola Favia(IMEC), Yuichi Higuchi(Panasonic (Japan)), N. Heylen(IMEC), H. Bender(IMEC), Harold Dekkers(IMEC), M. S. Chen, Xinyu Fu(Applied Materials (United States)), N. Yoshida, Soon Aik Chew(IMEC), A. Noori(Applied Materials (United States)), J. Geypen(IMEC), A. Br, Seshadri Ganguli(Applied Materials (United States))
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