Process control & integration options of RMG technology for aggressively scaled devicesA. Veloso, Naoto Horiguchi, E. Röhr et al.|Unknown|2012Cited by 21
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate TechnologyA. Veloso, Naoto Horiguchi, Soon Aik Chew et al.|Japanese Journal of Applied Physics|2013Cited by 16
W versus Co–Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology NodesA. Veloso, Naoto Horiguchi, Soon Aik Chew et al.|Japanese Journal of Applied Physics|2013Cited by 1
W vs. Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22nm Tech. NodesA. Veloso, Naoto Horiguchi, Soon Aik Chew et al.|Unknown|2012Cited by 0
Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech.A. Veloso, Naoto Horiguchi, Soon Aik Chew et al.|Unknown|2012Cited by 0