Process control & integration options of RMG technology for aggressively scaled devicesA. Veloso, Naoto Horiguchi, Xiaodong Shi et al.|Unknown|2012Cited by 21
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate TechnologyA. Veloso, Naoto Horiguchi, Soon Aik Chew et al.|Japanese Journal of Applied Physics|2013Cited by 16
Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration schemeA. Veloso, Naoto Horiguchi, G. Boccardi et al.|Japanese Journal of Applied Physics|2014Cited by 6
W versus Co–Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology NodesA. Veloso, Naoto Horiguchi, Soon Aik Chew et al.|Japanese Journal of Applied Physics|2013Cited by 1
Thermal and SF6-plasma treatments for improved (sub-)1nm EOT planar and FinFET-based RMG high-k last devices and enabling a simplified scalable CMOS integration schemeA. Veloso, Naoto Horiguchi, G. Boccardi et al.|Unknown|2013Cited by 0