W vs. Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22nm Tech. Nodes
A. Veloso(IMEC), Naoto Horiguchi(IMEC), T. Schram(IMEC), Anup Phatak(Applied Materials (United States)), Hilde Tielens(IMEC), Farid Sebaai(IMEC), L.-Å. Ragnarsson(IMEC), T. Witters(IMEC), S. Brus(University of Liège), L. Pantisano(IMEC), K. Devriendt(IMEC), Aaron Thean(National University of Singapore), A. Van Ammel, Paola Favia(IMEC), Yuichi Higuchi(Panasonic (Japan)), N. Heylen(IMEC), H. Bender(IMEC), Geert Eneman(Research Foundation - Flanders), Harold Dekkers(IMEC), Soon Aik Chew(IMEC), J. Geypen(IMEC), L. Carbonell, Olivier Richard(IMEC)
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