Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical PerformanceD.P. Brunco, Marc Heyns, Brice De Jaeger et al.|Journal of The Electrochemical Society|2008Cited by 267
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsBenjamin Vincent, Roger Loo, Yosuke Shimura et al.|Microelectronic Engineering|2010Cited by 105
Challenges and opportunities in advanced Ge pMOSFETsEddy Simoen, Cor Claeys, Geert Hellings et al.|Materials Science in Semiconductor Processing|2012Cited by 81
Advancing CMOS beyond the Si roadmap with Ge and III/V devicesMarc Heyns, Liesbeth Witters, A. Alian et al.|Unknown|2011Cited by 60
Germanium for advanced CMOS anno 2009: a SWOT analysisMatty Caymax, Marc Heyns, Eddy Simoen et al.|Unknown|2009Cited by 60