W versus Co–Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes
A. Veloso(IMEC), Naoto Horiguchi(IMEC), T. Schram(IMEC), Anup Phatak(Applied Materials (United States)), Hilde Tielens(IMEC), Farid Sebaai(IMEC), T. Witters(IMEC), S. Brus(University of Liège), L. Pantisano(IMEC), K. Devriendt(IMEC), A. Van Ammel, Paola Favia(IMEC), Yuichi Higuchi(Panasonic (Japan)), N. Heylen(IMEC), H. Bender(IMEC), Geert Eneman(Research Foundation - Flanders), Harold Dekkers(IMEC), Lars‐Åke Ragnarsson(IMEC), Soon Aik Chew(IMEC), Aaron Thean(IMEC), J. Geypen(IMEC), Laure Carbonell(IMEC), Olivier Richard(IMEC)
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