A record Gm<sub>SAT</sub>/SS<sub>SAT</sub> and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
Hiroaki Arimura(IMEC), Naoto Horiguchi(IMEC), A. Opdebeeck(IMEC), V. De Heyn(IMEC), Samuel Suhard, Frank Holsteyns, S. Brus(University of Liège), Daire Cott(IMEC), Thierry Conard(IMEC), E. Capogreco(IMEC), Nadine Collaert(IMEC), D. Mocuta(IMEC), L.-Å. Ragnarsson(IMEC), Liesbeth Witters(IMEC), Karine Kenis(IMEC), Dennis H. van Dorp(IMEC), G. Boccardi(IMEC), Kurt Wostyn(IMEC), Jérôme Mitard(IMEC), Roger Loo(IMEC)
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