Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical PerformanceD.P. Brunco, Marc Heyns, Brice De Jaeger et al.|Journal of The Electrochemical Society|2008Cited by 267
An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substratesNiamh Waldron, A. V-Y. Thean, Clément Merckling et al.|Unknown|2014Cited by 90
Challenges and opportunities in advanced Ge pMOSFETsEddy Simoen, Cor Claeys, Jérôme Mitard et al.|Materials Science in Semiconductor Processing|2012Cited by 81
Germanium for advanced CMOS anno 2009: a SWOT analysisMatty Caymax, Marc Heyns, Geert Eneman et al.|Unknown|2009Cited by 60
Advancing CMOS beyond the Si roadmap with Ge and III/V devicesMarc Heyns, Liesbeth Witters, A. Alian et al.|Unknown|2011Cited by 60