Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
R. Degraeve(IMEC), Aaron Thean(National University of Singapore), C. Kernstock(Deutsche Telekom (Austria)), G. Groeseneken(KU Leuven), G. Van den bosch(IMEC), V. Putcha(IMEC), Jan Van Houdt(KU Leuven), Ph. Roussel(IMEC), B. Kaczer(IMEC), A. Furnémont(IMEC), Zlatan Stanojević(IMEC), D. Linten(IMEC), A. Arreghini(IMEC), M. Karner(Deutsche Telekom (Austria)), Sergiu Clima(IMEC)
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