Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channelsR. Degraeve, Aaron Thean, M. Karner et al.|Unknown|2015Cited by 41
Defect profiling in FEFET Si:HfO2 layersBarry O’Sullivan, Jan Van Houdt, V. Putcha et al.|Applied Physics Letters|2020Cited by 35
The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuitsB. Kaczer, Tibor Grasser, J. Franco et al.|Solid-State Electronics|2016Cited by 23
Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NANDA. Subirats, A. Furnémont, A. Arreghini et al.|Unknown|2017Cited by 21