Hot carrier degradation and time-dependent dielectric breakdown in oxidesG. Groeseneken, H.E. Maes, R. Degraeve et al.|Microelectronic Engineering|1999Cited by 67
Validation of Retention Modeling as a Trap-Profiling Technique for SiN-Based Charge-Trapping MemoriesA. Suhane, Jan Van Houdt, A. Arreghini et al.|IEEE Electron Device Letters|2009Cited by 45
Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channelsR. Degraeve, Aaron Thean, Zlatan Stanojević et al.|Unknown|2015Cited by 41
Statistical spectroscopy of switching traps in deeply scaled vertical poly-Si channel for 3D memoriesM. Toledano-Luque, Jan Van Houdt, R. Degraeve et al.|Unknown|2013Cited by 36
Defect profiling in FEFET Si:HfO2 layersBarry O’Sullivan, Jan Van Houdt, V. Putcha et al.|Applied Physics Letters|2020Cited by 35