Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology
A. Veloso(IMEC), Naoto Horiguchi(IMEC), T. Schram(IMEC), Anup Phatak(Applied Materials (United States)), Hilde Tielens(IMEC), Farid Sebaai(IMEC), Eddy Simoen(IMEC), T. Witters(IMEC), S. Brus(University of Liège), Michael S. Chen(Applied Materials (United States)), Adam Brand, Wei Tang(Applied Materials (United States)), K. Devriendt(IMEC), Yu Lei(Applied Materials (United States)), A. Van Ammel, Paola Favia(IMEC), Yuichi Higuchi(Panasonic (Japan)), N. Heylen(IMEC), H. Bender(IMEC), Harold Dekkers(IMEC), Naomi Yoshida(Applied Materials (United States)), Xinyu Fu(Applied Materials (United States)), Srinivas Gandikota(Applied Materials (United States)), Lars‐Åke Ragnarsson(IMEC), Soon Aik Chew(IMEC), Atif Noori(Applied Materials (United States)), Aaron Thean(IMEC), J. Geypen(IMEC), Xinliang Lu(Applied Materials (United States)), Seshadri Ganguli(Applied Materials (United States))
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