Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and ReliabilityMohammed Zahid, Jan Van Houdt, Daniel Ruiz Aguado et al.|IEEE Transactions on Electron Devices|2010Cited by 38
Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETsM. Toledano-Luque, G. Groeseneken, B. Kaczer et al.|Unknown|2012Cited by 37
Statistical spectroscopy of switching traps in deeply scaled vertical poly-Si channel for 3D memoriesM. Toledano-Luque, Jan Van Houdt, Ph. Roussel et al.|Unknown|2013Cited by 36
Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memoriesM. Toledano-Luque, Jan Van Houdt, R. Degraeve et al.|Unknown|2012Cited by 34
Statistical characterization of current paths in narrow poly-Si channelsR. Degraeve, G. Groeseneken, M. Toledano-Luque et al.|Unknown|2011Cited by 30