New insights in the relation between electron trap generation and the statistical properties of oxide breakdownR. Degraeve, H.E. Maes, R. Bellens et al.|IEEE Transactions on Electron Devices|1998Cited by 647
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectricsA. Kerber, Udo Schwalke, H.E. Maes et al.|IEEE Electron Device Letters|2003Cited by 360
A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxidesR. Degraeve, H.E. Maes, G. Groeseneken et al.|Unknown|2002Cited by 337
A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdownR. Degraeve, H.E. Maes, R. Bellens et al.|IEEE Transactions on Electron Devices|1998Cited by 129
On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layersFelice Crupi, H.E. Maes, R. Degraeve et al.|IEEE Transactions on Electron Devices|1998Cited by 97