Defect profiling in FEFET Si:HfO2 layers

Barry O’Sullivan(Toshiba (Japan)), Jan Van Houdt(KU Leuven), Eddy Simoen(IMEC), Kaustuv Banerjee(IMEC), G. Van den bosch(IMEC), V. Putcha(IMEC), B. Kaczer(IMEC), N. Ronchi(IMEC), R. Degraeve(IMEC), Taehwan Jung(Toshiba (Japan)), S. R. C. McMitchell(IMEC), Y. Higashi, Roman Izmailov(Toshiba (Japan)), D. Linten(IMEC), L. Breuil(IMEC), Sergiu Clima(IMEC), V. V. Afanas’ev(IMEC), B. Truijen(Toshiba (Japan))
Applied Physics Letters
November 16, 2020
10.1063/5.0029072
Cited by 35

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