Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
M.J.H. van Dal(IMEC), R.J.P. Lander(NXP (Belgium)), F. Leys(IMEC), M. Kaiser(Philips (Netherlands)), G. Vellianitis(NXP (Belgium)), S. Biesemans(IMEC), M. Jurczak(IMEC), Bartek Pawlak(NXP (Belgium)), C. Jonville(NXP (Belgium)), Andriy Hikavyy(IMEC), Nadine Collaert(IMEC), M. Demand(IMEC), R.G.R. Weemaes(Philips (Netherlands)), Liesbeth Witters(IMEC), E. Kunnen(IMEC), Ray Duffy(NXP (Belgium)), S. Beckx(Imec the Netherlands), G. Curatola(NXP (Belgium)), T. Vandeweyer(IMEC), B. Degroote(IMEC), K. Anil(IMEC), E. Altamirano(IMEC), R. Rooyackers(IMEC), Christie Delvaux(IMEC), G. Doornbos(Vrije Universiteit Amsterdam)
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