High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO<sub>2</sub> Gate Dielectric
Jérôme Mitard(IMEC), Thomas Hoffmann(IMEC), Roger Loo(IMEC), Joshua Tseng(IMEC), Wendy Vanherle(IMEC), S. Biesemans(IMEC), Evi Vrancken(IMEC), L. Pantisano(IMEC), Gillis Winderickx(IMEC), Matty Caymax(IMEC), D. R. Leadley(University of Warwick), Brice De Jaeger(IMEC), J. Franco(KU Leuven), Masaharu Kobayashi, H. Bender(IMEC), Geert Eneman(Research Foundation - Flanders), P. Absil(IMEC), Raymond Krom(IMEC), Marc Meuris(IMEC), Wei Wang(Peking University), Benjamin Vincent(IMEC), Andrew Dobbie(University of Warwick), J. Geypen(IMEC), K. De Meyer(IMEC), M. Myronov(University of Warwick)
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