Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor depositionBenjamin Vincent, Matty Caymax, Federica Gencarelli et al.|Applied Physics Letters|2011Cited by 189
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSnFederica Gencarelli, Marc Heyns, Benjamin Vincent et al.|ECS Journal of Solid State Science and Technology|2013Cited by 128
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsBenjamin Vincent, Roger Loo, A. Vantomme et al.|Microelectronic Engineering|2010Cited by 105
Challenges and opportunities in advanced Ge pMOSFETsEddy Simoen, Cor Claeys, Jérôme Mitard et al.|Materials Science in Semiconductor Processing|2012Cited by 81
Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6Federica Gencarelli, Marc Heyns, Benjamin Vincent et al.|Thin Solid Films|2011Cited by 81