Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical PerformanceD.P. Brunco, Marc Heyns, Michel Houssa et al.|Journal of The Electrochemical Society|2008Cited by 267
Record I<inf>ON</inf>/I<inf>OFF</inf> performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalabilityJérôme Mitard, Marc Heyns, Brice De Jaeger et al.|Unknown|2008Cited by 56
High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based TechnologyFlorence Bellenger, Marc Heyns, Brice De Jaeger et al.|IEEE Electron Device Letters|2010Cited by 51
Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STIJérôme Mitard, Marc Heyns, Christopher G. Shea et al.|Symposium on VLSI Technology|2006Cited by 42
High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO<sub>2</sub> Gate DielectricJérôme Mitard, Thomas Hoffmann, Brice De Jaeger et al.|Japanese Journal of Applied Physics|2011Cited by 23