ゲート-ファースト及びゲート-ラスト集積化における高性能CMOS用キャップ無し単一金属ゲートを用いたデュアルチャネル技術
L Witters(GlobalFoundries (United States)), Naoto Horiguchi(IMEC), Wang W.-E., Roger Loo(IMEC), M Fukuda(KU Leuven), S Yamaguchi(KU Leuven), A Veloso, G. Mannaert(IMEC), Hilde Tielens(IMEC), Bart Duriez(KU Leuven), S. Brus(University of Liège), Andriy Hikavyy(IMEC), An Steegen(IMEC), Shinji Takeoka(Waseda University), K. Devriendt(IMEC), Ph. Roussel(IMEC), M Cho(KU Leuven), Paola Favia(IMEC), Kristof Kellens(IMEC), F Sebai(KU Leuven), Geert Hellings(IMEC), J. Franco(KU Leuven), Y Crabbe(KU Leuven), H. Bender(IMEC), Geert Eneman(Research Foundation - Flanders), Krtistien De Meyer(IMEC), Ragnarsson L.-A., E Rohr(Imec the Netherlands), Stefan Kubicek(Austrian Academy of Sciences), T. Schram(IMEC), Jérôme Mitard(IMEC), T. Kauerauf(IMEC)
International Electron Devices Meeting
January 1, 2011
Cited by 0
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