Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectricsA. Kerber, Udo Schwalke, E. Cartier et al.|Unknown|2003Cited by 92
Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodesA. Kerber, Udo Schwalke, Ph. Roussel et al.|IEEE Transactions on Electron Devices|2003Cited by 67
Effect of bulk trap density on HfO/sub 2/ reliability and yieldR. Degraeve, G. Groeseneken, A. Kerber et al.|Unknown|2004Cited by 42
Gate-last vs. gate-first technology for aggressively scaled EOT logic/RF CMOSA. Veloso, Thomas Hoffmann, L.-Å. Ragnarsson et al.|Symposium on VLSI Technology|2011Cited by 31
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