CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON
A. Lauwers(IMEC), J. A. Kittl(IMEC), S. Biesemans(IMEC), S. Locorotondo(IMEC), M. Jurczak(IMEC), C. Demeurisse(Imec the Netherlands), S. Brus(University of Liège), Karl Opsomer(IMEC), R. Verbeeck(IMEC), Thomas Hoffmann(IMEC), C. Vrancken(IMEC), M. Niwa, H.Y. Yu(IMEC), Małgorzata Pawlak(IMEC), T. Chiarella(IMEC), A. Veloso(IMEC), R. Mitsuhashi(Panasonic (China)), B. Sijmus(IMEC), Philip Absil(IMEC), K.G. Anil(IMEC), Karen Maex(IMEC), M.J.H. van Dal(IMEC), Jean‐François de Marneffe(IMEC), M. de Potter(IMEC), S. Kubicek(IMEC)
Cited by 17
Related Papers
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
|Nano Letters|2014|338
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
|IEEE Transactions on Electron Devices|2013|259
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252