CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiONA. Lauwers, J. A. Kittl, S. Locorotondo et al.|Unknown|2006Cited by 17
Demonstration of a New Approach Towards 0.25V Low-Vt CMOS Using Ni-Based FUSIS. Biesemans, H.Y. Yu, Philip Absil et al.|Unknown|2006Cited by 6
Low Power CMOS Featuring Dual Work Function FUSI on HfSiON and 17ps Inverter DelayThomas Hoffmann, S. Biesemans, A. Veloso et al.|Unknown|2006Cited by 4