NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics
K. Henson(Imec the Netherlands), S. Biesemans(IMEC), Werner Boullart(IMEC), W. Deweerd(IMEC), M. Jurczak(IMEC), S. Brus(University of Liège), Yong Sik Yim(Samsung (United States)), Marc Schaekers(IMEC), Anil Kottantharayil(IMEC), Jacob C. Hooker(Northwestern University), Nadine Collaert(IMEC), M. Demand(IMEC), A. Van Ammel, Stefan De Gendt(Imec the Netherlands), Christina De Meyer, Kris Baert(Ghent University), S. Beckx(Imec the Netherlands), Monique Ercken(IMEC), B. Degroote(IMEC), M. W. Goodwin(Texas Instruments (United States)), T. Schram(IMEC), R. Rooyackers(IMEC), Abhisek Dixit(IMEC)
Unknown
January 1, 2005
Cited by 8
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